鎮江奇美入口     
關於奇美 塑化產品 訂貨專區 客戶服務 聯絡我們 2010/9/10  星期五
產品搜尋
ABS 樹脂
SAN 樹脂
PS 樹脂
壓克力樹脂
PC 樹脂
PC/ABS 樹脂
TPE
Q 膠
BR
SSBR
HBR
光學壓克力板
MS樹脂
ASA樹脂
EA-714
電子化學品    蝕刻液   
產品用途 :
Cr膜蝕刻
Cr 蝕刻反應機制 :
The Following is Cr-etching reaction formula using Ce(NH4)2(NO3)6.
As Ce(NH4)2(NO3)6 is strong oxidizing agent, Ce(IV) is reduced to Ce(III).
       Ce4+ + e- ---> Ce3+ ……………………………(1)
While, Cr is ionized.
       Cr ---> Cr2+ + 2e- ………………………………(2)
       Cr ---> Cr3+ + 3e- ………………………………(3)
Due to the above, it seems that Ce and Cr reacts as follows :
       2Ce4+ + Cr ---> 2Ce3+ + Cr2+ …………………(4)
       3Ce4+ + Cr ---> 3Ce3+ + Cr3+ …………………(5)
And Ce(III) ion generate precipitation of Ce(OH)3.
Ce3+ + 3H2O <===> Ce(OH)3 + 3H+
But, it Seems that acid control precipitation of Ce(OH)3 by inhibitor the above reflection.
包裝方式 :
  回首頁 | 寫信給我們  © Copyright 2003 Chi Mei Corporation. All Rights Reserved.